Power transistors feature outstanding robustness and excellent ESD capability
11-05-2017 |
Mouser Electronics
|
Semiconductors
Infineon 600V CoolMOS P7 Power Transistors, available now from Mouser, are seventh generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability.
Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
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