Small FemtoFETs with Low RDS(on) for wearable applications

Texas Instruments has introduced what is claimed to be the world’s smallest, low RDS(on), FemtoFETs for wearables and other space-constrained devices. While decreasing size, the device maximizes silicon area for optimum performance. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The new device provide ultra-small footprints of 0.7mm x 0.6mm x 0.35mm, ultra-low charge, and low leakage, with IDSS <50nA, IGSS <25nA. One of the devices in the new family, CSD15380F3, also claims to provide 50% lower input capacitance (Ciss) than competing devices.