New power MOSFET offers low on-resistance for increased efficiency and power density

Vishay Intertechnology has introduced a new 25V n-channel TrenchFET Gen IV power MOSFET that claims to feature the industry's lowest maximum on-resistance for such a device – 0.58mOhm at 10V. Delivering increased power density and efficiency for a range of applications, the Vishay Siliconix SiRA20DP gives the lowest gate charge and gate charge times on-resistance figure of merit (FOM) for devices with on-resistance below 0.6mOhm. The device is offered in the 6mm x 5mm PowerPAK SO-8 package, is claimed to be one of the only two 25V MOSFETs in the world with maximum on-resistance below 0.6mOhm. The SiRA20DP, in comparison, offers lower typical gate charge of 61nC and a 32 % lower FOM of 0.035Ohm*nC. All other 25V n-channel MOSFETs feature on-resistance that is 11 % higher or more. The SiRA20DP's low on-resistance minimises conduction power losses to enhance system efficiency and allow higher power density, which is ideal for OR-ring functions in redundant power architectures. The MOSFET's low FOM improves switching performance for DC-DC conversion in server power supplies and telecom, battery switching in battery systems, and load switching for 5V to 12V input rails.