GaN with integrated driver gives new levels of power density and efficiency

The Texas Instruments LMG3410R070 GaN power stage with integrated driver and protection allows designers to obtain new levels of power density and efficiency in power electronics systems. The device’s inherent advantages over silicon MOSFETs combine ultra-low input and output capacitance, zero reverse recovery to lessen switching losses by as much as 80%, and low switch node ringing to decrease EMI. These advantages allow dense and efficient topologies like the totem-pole PFC. The device provides a smart alternative to traditional cascode GaN and standalone GaN FETs by incorporating a unique set of features to maximise reliability, simplify design and optimise the performance of any power supply. Integrated gate drive allows 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, over-temperature shutdown stops thermal runaway, and system interface signals provide self-monitoring capability.