GaN power stage offers advantages over silicon MOSFETs

Texas Instruments LMG3410R070 600V 70mOhm GaN Power Stage with integrated driver and protection provides advantages over silicon MOSFETs. These cover ultra-low input and output capacitance. The device features zero reverse recovery which reduces switching losses by as much as 80% and low switch node ringing to decreasing EMI. The GaN Power Stage offers new ways to obtain levels of efficiency and power density in power electronics systems. Dense and efficient topologies like the totem-pole PFC are allowed through these benefits. An individual set of features to maximise reliability, simplify design and optimise the performance of any power supply are combined. This offers a smart alternative to traditional cascode GaN and standalone GaN FETs. These individual set of features incorporate an integrated gate drive allowing 100V/ns switching with near zero Vds ringing and 100ns current limiting, self-protecting against unintended shoot-through events. These features also combine a system interface signal giving a self-monitoring capability. Typical applications include high-density industrial and consumer power supplies, multi-level converters, solar inverters, industrial motor drives, uninterruptable power supplies, and high voltage battery chargers