Compact and robust isolated SiC MOSFET driver includes active clamping

Power Integrations announced that its SIC118xKQ SCALE-iDriver, a high-efficiency, single-channel gate driver for SiC MOSFETs, is now certified to AEC-Q100 for automotive use. Devices can be configured to maintain gate-drive voltage demands of commonly used SiC MOSFETs and offers sophisticated safety and protection features.

The SIC1182KQ (1200V) and SIC1181KQ (750V) devices are optimised for driving SiC MOSFETs in automotive applications, displaying rail-to-rail output, fast gate switching speed, unipolar supply voltage supporting positive and negative output voltages, integrated power and voltage management and reinforced isolation. Critical safety features include Drain to Source Voltage (VDS) monitoring, SENSE readout, primary and secondary UVLO, current-limited gate drive and AAC which aids safe operation and soft turn-off -under fault conditions. AAC in combination with VDS monitoring assures safe turn-off in shorter than 2µs during short-circuit conditions. Gate-drive control and AAC features enable gate resistance to be minimised; this decreases switching losses, maximising inverter efficiency.

Comments Michael Hornkamp, senior director of marketing for automotive gate-driver products at Power Integrations: “Silicon carbide MOSFET technology opens the door for smaller, lighter automotive inverter systems. Switching speeds and operating frequencies are increasing; our low gate resistor values maintain switching efficiency, while our fast short circuit response quickly protects the system in the event of a fault.”

“Furthermore, SCALE-iDriver sets a new standard in isolation robustness for functional safety; even if a power device causes catastrophic driver failure, SCALE-iDriver’s isolation remains intact ensuring that no part of the chassis will carry life-threatening high voltages,” continued Hornkamp.