GaN-on-SiC HEMT for 4G and 5G communications

Mouser now stocks the QPD0011 HEMT from Qorvo. The GaN-on-SiC transistor provides power and performance for cellular base station and RF applications in 5G massive MIMO, LTE, and WCDMA systems.

The device is an asymmetric, dual-path amplifier in a small, 7mm x 6.5mm DFN package. Utilising variable power inputs from 30W to 60W and drain voltages of +48V, the device operates between 3.3GHz and 3.6GHz. It features up to 13.3dB of gain for ultra-efficient signal, peak, and power performance (up to 90W) in Doherty design environments.

For development, the company also stocks the QPD0011EVB1 Evaluation Board. The platform comprises an example application circuit, enabling rapid prototyping when combined into existing designs.

Applications for the device include macrocell and microcell base stations, active antennas, and asymmetric Doherty designs.