Smallest DFN MOSFETs improve performance and reduce space significantly

Nexperia now offers a new range of 20V and 30V MOSFETs in the world’s smallest DFN package, the DFN0603. It already delivers ESD protection devices in this package but has succeeded in bringing it to their MOSFET portfolio, an unmatched feat in the industry.

Next-generation wearable and hearable devices include new levels of AI and ML, creating several challenges for product designers. Firstly, available board space is at a premium as functionality is added, and heat dissipation becomes a problem as power consumption increases.

The company has drawn on its decades of experience designing this innovative range of tiny MOSFETs to overcome both concerns. The ultra-low-profile package, measuring just 0.63mm x 0.33mm x 0.25mm, utilises 13% less space than MOSFETs in the next smallest package (DFN0604). This size reduction has been delivered without compromising device performance, in fact, the RDS(on) of these devices has been lowered by 74%, helping to enhance efficiency and enabling wearable equipment designers to accomplish even greater power density.

This new range of tiny MOSFETs includes the PMX100UN 20 V, N-channel Trench MOSFET; PMX100UNE 20 V, N-channel Trench MOSFET with 2kV ESD protection (HBM); PMX300UNE 30 V, N-channel Trench MOSFET; and PMX400UP 20 V, P-channel Trench MOSFET.