New high-performance MOSFET reduces synchronous rectification losses

Toshiba Electronics Europe GmbH has released a new 150V N-channel power MOSFET based upon its latest generation U-MOS X-H Trench process. The new MOSFET (TPH9R00CQ5) is specifically created for high-performance switching power supplies such as those employed in communication base stations and other industrial applications.

With a maximum VDSS rating of 150V and current handling (ID) of 64A, the new device offers a very low drain-source On-resistance (RDS(ON)) of only 9mOhm (max). This is a more than 40% reduction versus the previous generation product TPH1500CNH1.

In high-performance power solutions that employ synchronous rectification, reverse recovery performance is extremely important. Due to the inclusion of a high-speed body diode, the new device decreases the reverse recovery charge (Qrr) by around 74% (to 34nC typ.) when compared to an existing device such as the TPH9R00CQH. Additionally, the reverse recovery time (trr) of just 40ns is an improvement of over 40% compared with earlier devices.

Along with a low gate charge (Qg) of just 44nC, these improvements significantly reduce losses and increase power density in high-performance, efficient power solutions. A channel temperature of 175C (max) is remarkable for MOSFETs with high-speed diode and will provide the designer with increased thermal headroom.

The new device also lowers spike voltages produced during switching, thereby enhancing the EMI characteristics of designs and lowering the necessity for filtering. It is housed in a versatile, surface-mount SOP Advance(N) package measuring only 4.9mm x 6.1mm x 1mm.

To support designers, the company has designed a G0 SPICE model for rapid verification of the circuit function and highly accurate G2 SPICE models for precise reproduction of transient characteristics.

Further design support is offered in advanced reference designs, now available from the company's website. These incorporate a 1kW non-isolated buck-boost DC-DC converter, a three-phase multi-level MOSFET-based inverter and a 1kW full bridge DC-DC converter – all of which use the new device.