Mass production of MOSFET for automotive energy recovery systems

Magnachip Semiconductor Corporation has begun mass production of its new 40V MXT MOSFET for automotive energy recovery systems. This product is employed in the automobile of a global automaker.

Created on a Power Dual Flat No-lead (PDFN) 56 package with improved design of the core cells and terminations, the MOSFET (AMDU040N014VRH) provides RDS(on)2 as low as 1.4mOhm to enhance the efficiency of kinetic energy recovery. Also, a guaranteed operating junction temperature of up to 175C and a high level of avalanche ruggedness improve the power density and efficiency of the energy recovery system.

With the application of the PDFN56 package, the size of this new MOSFET decreased by approximately 80% compared to other 40V MOSFET products developed with a DPAK. As a PDFN56 package is widely used in the automotive sector, the new product is ideal for various applications, including reverse voltage protection circuits, brushless direct current motors of internal combustion engines, and regenerative braking systems of EVs.

“We are pleased to deliver another innovative automotive power solution, which is fully AEC - Q101 qualified for its performance and stability,” said YJ Kim, CEO of Magnachip. “Leveraging our heritage of innovative technology, Magnachip will continue to develop premium products that satisfy the diverse and changing market requirements of the automotive market.”