SiC Schottky barrier diodes enhance efficiency in industrial applications

Toshiba Electronics Europe GmbH announced the release of 12 650V SiC SBDs based on its latest third-generation technology. The new devices are specially intended for efficiency-critical industrial equipment applications, including switching power supplies, EV charging stations and PV inverters.

Known as the TRSxxx65H series, the new devices employ new Schottky metal. The third-generation SiC SBDs chip optimises the JBS structure of the second-generation products, thereby lowering the electric field at the Schottky interface and lowering leakage current – supplying enhanced efficiency.

The third-generation devices accomplish excellent low forward voltage (VF) of 1.2V (typ.). This represents a 17% reduction when compared to second-generation products. The new third-generation products have enhanced the trade-offs between VF and total capacitive charge (QC), typically 17nC for the TRS6E65H.

Also, the VF and reverse current (IR) ratio is enhanced compared to second-generation products, with the TRS6E65H attaining a typical IR value of 1.1µA. All of these improvements lower power dissipation and add to higher levels of efficiency within end equipment.

Devices within the series can forward DC currents (IF(DC)) up to 12A and square wave non-repetitive surge currents IFSM up to 640A. Seven of the new devices are housed in TO-220-2L packages, while the remaining five are supplied in compact and flat DFN8×8 SMD packages.