Radiation-hardened memory portfolio extended

Space-based applications are an important area for Infineon Technologies AG, with the company’s products being employed in satellites, mars rover instruments and space telescopes, all of which need the highest reliability even under the most adverse conditions. The company has announced availability of the industry’s first radiation-hardened (rad hard) 1mb and 2mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory devices. These additions to its extensive portfolio of memories feature unsurpassed reliability and endurance, with up to 120 years of data retention at 85C, along with random access and full memory write at bus speeds.

The F-RAM devices are intrinsically rad hard, and the technology is ideal for the evolving mission needs of space-based applications that historically have used slower, less rugged EEPROM nonvolatile storage devices. Features compared to alternatives include faster memory random access, better data security with instant nonvolatile write technology and low power, with extremely low programming voltage down to 2V and a maximum operating current of 20mA.

“As more space applications are architected to process data on-system, and not on-ground via telemetry, there is increasing demand for high-reliability nonvolatile memory to work in tandem with space-grade processors and FPGAs for data-logging applications,” said Helmut Puchner, vice president, Fellow Aerospace and Defense, Infineon Technologies. “Infineon introduced the first SPI F-RAM devices for this market in 2022, and the addition of parallel interface devices reflects our commitment to delivering best-in-class, highly reliable and flexible solutions for next-generation space requirements.”

Target applications for these rad hard F-RAM devices include data storage for sensors and instruments, data logging for calibration data, secure key storage for data encryption, and boot code storage. As well as outer space, they are also suited to avionic and other applications that need defence standard temperature grades (-55C to 125C).

Like the SPI version, the chemical composition of the new parallel interface F-RAM devices results in outstanding nonvolatile memory features, including instantaneous switching of atomic state instead of a trapped charge to program bits in EEPROM technologies. F-RAM is inherently immune to soft errors and magnetic field or radiation effects. There is no need for software to manage page boundaries, and near infinite endurance (10 13 write cycles) means there is no requirement for wear levelling.