06-11-2024 | Innoscience Technology | Semiconductors
Innoscience Technology has expanded its portfolio with two 100V automotive-grade GaN devices. The company’s INN100W135A-Q (RDS(on),max = 13.5mOhm) and smaller package INN100W800A-Q (RDS(on),max = 80mOhm) are both certified to AEC-Q101 and optimised for LiDAR, high-power density DC-DC converters, and Class D audio applications in the automotive sector.
The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13mm x 1.63mm and 0.9mm x 0.9mm, respectively, provide notable size and power efficiency advantages. These devices are specifically tailored for the necessities of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Qg and Qoss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m, essential for advanced driver assistance and autonomous driving applications.
Dr Denis Marcon, general manager, Innoscience Europe, comments: “Both devices have been designed to meet the growing demand for efficiency and precision in driving assistance and autonomous driving technologies – GaN devices are rapidly replacing traditional silicon in critical automotive applications due to their superior performance. In LiDAR applications, it is well-understood that GaN enables higher resolution and greater detection distances while reducing power loss and temperature rise than is possible with traditional silicon technology.”