Innoscience Technology has expanded its portfolio with two 100V automotive-grade GaN devices. The company’s INN100W135A-Q (RDS(on),max = 13.5mOhm) and smaller package INN100W800A-Q
Semiconductors | 06-11-2024
Innoscience Technology has announced the INS1001DE designed to drive single-channel GaN HEMTs in low-side, high-side, or secondary-side SR applications. Min Chen, VP of IC Design a
Semiconductors | 16-04-2024
Innoscience has announced a family of four new integrated devices that combine power GaN HEMT, driver, current sense and other functions within a single, industry-standard QFN 6x8m
Semiconductors | 04-03-2024
Innoscience has announced new, low RDS(on), high-power devices in its ever-growing family of 650V/700V enhancement-mode power transistors. New 30mOhm, 50mOhm, and 70mOhm RON parts
Semiconductors | 29-02-2024
Innoscience Technology has launched a new 100V bi-directional member of the company's VGaN IC family. The first family of VGaN devices rated 40V with a wide on-resistance range (1.
Power | 14-02-2024
Innoscience Technology has revealed a new range of low-voltage discrete HEMTs in FCQFN packaging. Rated at 40V, 100V and 150V, the 'flip chip' formatting makes it straightforward f
Power | 15-12-2023
Innoscience Technology has collaborated with the Bern University of Applied Sciences to provide a reference demo that employs its 650V InnoGaN HEMT devices in a multilevel topology
Power | 12-05-2023
Innoscience Technology has released the first in a new family of SolidGaN-integrated GaN devices. ISG3201 is a complete half-bridge circuit comprising two 100V 3.2mOhm InnoGaN HEMT
Power | 28-03-2023
Innoscience Technology will play a full and active role at the upcoming electronica 2022 exhibition. Denis Marcon, general manager Europe at Innoscience, will participate in two fo
Power | 07-11-2022
Innoscience Technology offers a complete range of 650V E-mode GaN HEMT devices. New 190mOhm, 350mOhm and 600mOhm RDS(on) devices in industry-standard 8x8 and 5x6 DFN packages to ad
Power | 26-10-2022
Innoscience Technology has released the Bi-GaN series of bi-directional GaN HEMT devices that save space and enable fast charging without suffering from reliability-limiting and po
Semiconductors | 07-09-2022
Innoscience Technology has released the INN40W08, a 40V bi-directional GaN-on-Si enhancement mode HEMT for mobile devices, laptops and cellular phones. The device has been produced
Semiconductors | 23-02-2022
Innoscience Technology has launched its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is now supporting customers by adding design and
Semiconductors | 19-01-2022
