Infineon Technologies AG has introduced the EiceDRIVER Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate driver power supplies. With the family, the company extends its portfolio of power devices to supply designers with a solution for isolated gate driver supply. By employing the devices, asymmetrical output voltages can be implemented to supply isolated gate drivers in a cost-effective and space-saving manner. This makes the family particularly suited to industrial or consumer applications needing isolated gate drivers, including solar applications, EV charging, energy storage systems, welding, uninterruptible power supplies and drive applications.
The family comes in a compact TSSOP8 pin package with power integration and optimisations to generate an asymmetric output voltage. It is optimised for asymmetric gate driver supply via its unique duty-cycle adjustment capability. The devices support a wide input voltage range of up to 20V. They also provide integrated temperature, short-circuit, and UVLO protection to prevent unwanted system faults.
The family is obtainable in the following four product variants: 2EP100R and 2EP101R are optimised for low component count designs for IGBT and SiC MOSFET gate driver power supplies. 2EP110R allows fine adjustment of the duty cycle to match the output voltage ratio to the application needs of SiC and GaN power switches. 2EP130R is optimised for highly flexible designs to meet different application needs. The device offers five-stage overcurrent protection, 41 selectable switching frequencies or synchronisation with external PWM for transformer matching, and 41 selectable duty-cycle options to adjust the output voltage.