SiC full-bridge modules simplify development of solar, energy storage and battery charging

SemiQ Inc. has announced a family of three 1200V SiC full-bridge modules, each incorporating two of the company's rugged high-speed switching SiC MOSFETs with reliable body diode.

The modules have been designed to simplify the development of photovoltaic inverters, energy storage, battery charging and other high-frequency DC applications.

Available in 18, 38 and 77mOhm (RDSon) variants, the modules have been tested at voltages exceeding 1350V and produce a continuous drain current of up to 102A, a pulsed drain current of up to 250A and a power dissipation of up to 333W.

Operational with a junction temperature of up to 175C, the rugged B2 modules have extremely low switching losses (EON 0.13mJ, EOFF 0.04mJ at 25C – 77mOhm module), low zero-gate voltage drain/gate source leakage (0.1µA/1nA – all modules) and low junction to case thermal resistance (0.4C per watt – 18mOhm module).

"By integrating high-speed SiC MOSFETs with exceptional performance and reliability, our new QSiC 1200V family of full-bridge modules sets a new standard for power density and efficiency in demanding DC applications. This family of modules simplifies system design and enables faster time-to-market for next-generation solar, storage, and charging solutions," said Seok Joo Jang, director of Module Engineering at SemiQ.

The modules can be mounted directly to a heat sink, and are housed in a 62.8mm x 33.8mm x 15mm package (including mounting plates) with press-fit terminal connections and split DC negative terminals.