Third-generation SiC MOSFET cuts size while improving performance

SemiQ Inc. has released the QSiC 1200V MOSFET, a third-generation SiC device that reduces the die size while improving switching speeds and efficiency.

The device is 20% smaller than the company's second-generation SiC MOSFETs and has been developed to increase performance and cut switching losses in high-voltage applications. It targets various markets, including EV‑charging stations, solar inverters, industrial power supplies, and induction heating.

In addition to having a drain-to-source voltage (VDS) of 1200V, the MOSFET reduces total switching losses to 1646µJ and has a low on-resistance (RDS,on) of 16.1mOhm. It is available as a bare die or in a four-pin TO-247 4L discrete package measuring 31.4mm x 16.1mm x 4.8mm, which includes a reliable body diode and a driver-source pin for gate driving.

High-quality Known Good Die (KGD) testing has been conducted utilising UV tape and Tape and Reels, with all parts undergoing testing and verification at voltages exceeding 1400V and being avalanche tested to 800mJ. Reliability is further improved through the device's 100% wafer-level gate oxide burn-in screening and 100% UIL testing of discrete packaged devices.

The device has been developed to have a low reverse recovery charge (QRR 470nC) and lower capacitance, improving switching speed, switching losses, EMI and overall efficiency; to be easy to parallel; and with a longer creepage distance (9mm), improving electrical insulation, voltage tolerance and reliability.

Dr Timothy Han, president at SemiQ, said: "The move to Gen3 SiC further increases the benefits of SiC MOSFETs over IGBTs. These devices not only deliver vastly improved performance, but cut die size and cost versus previous generations. As a result, the launch of the QSiC 1200V opens the technology and its benefits to a far greater range of applications. The device delivers industry-leading performance figures, notably on gate threshold voltage, and we're delighted to be demonstrating this first at APEC."

The MOSFETs have a continuous operational and storage temperature of -55C to 175C. It has a recommended operational gate-source voltage of -4/18V, with a VGSmax of -8/22V, and a power dissipation of 484W (core and junction temperature 25C).

The device has a junction-to-case thermal resistance of 0.26C per watt (40C per watt junction to ambient) for static electrical characteristics. Its Zero gate voltage drain current is 100nA, with a gate-source voltage current of 10 nA. Its AC characteristics include a turn-on delay time of 21ns with a rise time of 25ns; its turn-off delay time is 65ns with a fall time of 20ns.

An increased range of resistances is available in bare-die and TO-247 4L packages with the following options:

16mOhm: GP3T016A120X / GP3T016A120H

20mOhm: GP3T020A120X / GP3T020A120H

40mOhm: GP3T040A120X / GP3T040A120H

80mOhm: GP3T080A120X / GP3T040A120H

Both the 16mOhm (AS3T016A120X/AS3T016A120H) and 40mOhm (AS3T040A120X/AS3T040A120H) options have been qualified for Automotive Applications Product Validation according to AEC-Q101.

The SemiQ QSiC 1200V will be displayed at APEC 2025, booth #1348, from March 16 to 20, 2025.