SiC MOSFETs enable compact and cost-optimised systems

SemiQ Inc. has released a highly efficient 1200V SiC MOSFET Six-Pack Modules series. These have been developed to facilitate lower cost and more compact large-scale system-level designs.

The rugged, high-speed switching SiC MOSFETs implement planar technology with rugged gate oxide and feature a reliable body diode. They are arranged in a three-phase bridge topology, with the modules additionally featuring split DC negative terminals, press-fit terminal connections, and a Kelvin reference for stable operation.

The high-power-density modules benefit from low switching losses and low junction-to-case thermal resistance. All parts have been tested beyond 1350 V, with 100% wafer-level burn-in (WLBI).

They have been developed for applications including AC/DC converters, energy storage systems, battery charging, motor drives, and PFC boost converters, as well as EV fast charging, induction heating and welding, renewable energy supplies, and UPS.

The modules are operational to 175C junction temperature and designed for easy mounting, including direct mounting to a heatsink. The product family has been launched with 20mOhm, 40mOhm and 80mOhm variants (GCMX020A120B2T1P, GCMX040A120B2T1P and GCMX080A120B2T1P) that have a power dissipation of 263W, 160W and 103W respectively.

They conduct a continuous drain current of 29-30A and a pulsed drain current of 70A. They also have a turn-on switching energy of 0.1-0.54mJ and a turn-off switching energy of 0.02-0.11mJ, with a switching time of 56-105ns.

The module is available immediately in a 62.8mm x 33.8mm x 15mm package, including heatsink mountings.