SiC Schottky diodes deliver industry-leading FOM and system efficiency

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low FOM 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is created for high-efficiency power switching applications, such as DC to DC and AC to DC conversion, renewable energy, data centres (particularly those that process heavy AI workloads, and industrial motor drives.

The industry-leading FOM, calculated as FOM=QC×VF, is attributed to negligible switching losses, thanks to the absence of reverse recovery current, low capacitive charge (QC), and low forward voltage (VF) minimising conduction losses, improving overall power efficiency. These characteristics make them excellent for high-speed switching circuits.

The high-performance SiC diodes are also notable for the industry's lowest reverse leakage (IR) at 20µA (max.). This minimises heat dissipation and conduction losses, enhancing system stability and reliability, particularly compared to silicon Schottky devices. This reduction in heat dissipation also lowers cooling costs and operating expenses.

The compact and low-profile T-DFN8080-4 (typ. 8mm x 8mm x 1mm) surface mount package includes a large underside heat pad, which lowers thermal resistance. It needs less board space and a larger heat pad, so it is an ideal alternative to the TO252 (DPAK). This benefits circuit designs by boosting power density, lowering overall solution size, and decreasing the cooling budget.