Accelerate time-to-market for next-generation power semiconductors

Navitas Semiconductor and Plexim GmbH have partnered to release GeneSiC G3 SiC MOSFET and Gen 5 MPS diode PLECS thermal loss models for highly accurate simulations of entire power electronics systems.

Power designers can simulate power and thermal losses in assorted soft- and hard-switching applications. Proprietary GeneSiC trench-assisted planar-gate MOSFET technology provides the lowest RDS(ON) at high temperatures and the highest efficiency at high speeds, and new MPS diodes with ‘low-knee’ characteristics drive unprecedented, industry-leading levels of performance, robustness and quality.

“Accurate, empirically-based simulation models maximise the chance of first-time-accurate designs, accelerating time-to-market and time-to-revenue,” noted Dr Ranbir Singh, Navitas EVP for the GeneSiC business line. “For the power designer, understanding the leading-edge performance of GeneSiC MOSFETs and MPS diodes with detailed device characteristics, plus power, efficiency, and thermal analysis, is a critical competitive advantage.”

“The intuitive and highly efficient PLECS lookup-table-based approach to simulating thermal semiconductor losses in complex power electronic circuits is key,” said Kristofer Eberle, Plexim, North America. “Unlike legacy modelling approaches that are not well-suited to new wide bandgap materials, PLECS uses a simplified but accurate behavioural description to highlight the superior performance of the GeneSiC MOSFETs.”