Ecosystem provides fastest and lowest latency high-capacity 128GB RDIMMs

Micron Technology, Inc. has announced its 32Gb monolithic die-based 128GB DDR5 RDIMM memory delivering best-in-class performance of up to 8000MT/s1 to support data centre workloads today and into the future. These high-capacity, high-speed memory modules are engineered to fulfil the performance and data-handling needs of a broad range of mission-critical applications in data centre and cloud environments, including AI, IMDBs and efficient processing for multithreaded, multicore count general compute workloads. Powered by the company's industry-leading 1β (1-beta) technology, the 32Gb DDR5 DRAM die-based 128GB DDR5 RDIMM memory offers more than 45% improved bit density, up to 24% improved energy efficiency, up to 16% lower latency, and up to a 28% improvement in AI training performance with competitive 3DS through-silicon via (TSV) products.

"We are proud to set a new standard for high-capacity, high-speed memory in the data centre with Micron's 128GB DDR5 RDIMMs, which delivers the memory bandwidth and capacity required for increasingly compute-intensive workloads," said Praveen Vaidyanathan, vice president and general manager of Micron's Compute Products Group. "Micron continues to enable improvements to the data centre ecosystem with early access to our advanced technologies and support in the design and integration of leading-edge high-capacity memory solutions."

This 32Gb DDR5 memory solution employs innovative die architecture choices for leading array efficiency and the densest monolithic DRAM die. Voltage domain and refresh management features help optimise the power delivery network, providing much-needed energy efficiency improvements. Further, the die-dimension aspect ratio was optimised to advance the manufacturing efficiency of the 32Gb high-capacity DRAM die.

By using AI-powered smart manufacturing methods to facilitate these world-class innovations, the company's 1β process technology node has attained yield maturity in the fastest time in the company's history. Its 128GB RDIMMs will be shipping in platforms capable of 4800MT/s, 5600MT/s, and 6400MT/s in 2024 and designed into future platforms capable of up to 8000MT/s.

"Our latest 4th Gen AMD EPYC processors will benefit from optimised memory capacity per core with Micron's 128GB RDIMMs, which use 32Gb monolithic DRAM to provide an improved total cost of ownership solution for business-critical data enterprise workloads, such as AI, high-performance computing and virtualisation," said Dan McNamara, senior vice president and general manager, Server Business Unit, AMD. "As AMD advances compute with our next-gen EPYC processors, Micron's 128GB RDIMMs will likely become one of the main memory options to deliver high-capacity and bandwidth per core capabilities to address the demands of memory-intensive applications."

"We look forward to Micron's 32Gb-based 128GB RDIMM for the bandwidth and performance-per-watt solution benefits available in the server and AI systems market. Intel is evaluating this 32Gb memory offering for key DDR5 server platforms based on the resulting total cost of ownership benefits to cloud, AI and enterprise customers," said Dr. Dimitrios Ziakas, vice president of Intel's Memory and IO Technologies.