GaN FET offers higher power density

EPC has introduced the 100V, 1mOhm EPC2361 GaN FET in a compact 3mm x 5mm QFN package, delivering higher power density for DC-DC conversion, fast charging, motor drives, and solar MPPTs.

This is the lowest on-resistance GaN FET on the market, providing double the power density compared to the company's prior-generation products.

The device is supplied in a thermally enhanced QFN package with an exposed top and a tiny footprint. The device's maximum RDS(on) x Area is 15mΩmm2 – over five times smaller than comparable 100 V silicon MOSFETs.

Its ultra-low on-resistance allows higher power density and efficiency in power conversion systems, reducing energy consumption and heat dissipation. This breakthrough is especially significant for high-power PSU AC/DC synchronous rectification applications, high-frequency DC-DC conversion for data centres, motor drives for eMobility, robotics, drones, and solar MPPTs.

"Our new 1mOhm GaN FET continues to push the boundaries of what is possible with GaN technology, empowering our customers to create more efficient, compact, and reliable power electronics systems," comments Alex Lidow, EPC CEO and co-founder.

The EPC90156 development board is a half-bridge featuring the EPC2361 GaN FET. It is designed for 100V maximum device voltage and xxA maximum output current. This board aims to simplify the evaluation process of power systems designers to speed up their product's time to market. This 2" x 2" (50.8mm x 50.8mm) board is developed for optimal switching performance and contains all critical components for easy evaluation.