N-Channel MOSFET features source flip technology

Vishay Intertechnology, Inc. offers a versatile new 30V n-channel TrenchFET Gen V power MOSFET that supplies increased power density and improved thermal performance for industrial, computer, consumer, and telecom applications. Featuring source flip technology in the 3.3mm x 3.3mm PowerPAK 1212-F package, the Vishay Siliconix SiSD5300DN delivers best-in-class on-resistance of 0.71mOhm at 10V and on-resistance times gate charge – a critical FOM for MOSFETs used in switching applications – of 42 mOhm*nC.

Occupying the same footprint as the PowerPAK 1212-8S, the device provides 18 % lower on-resistance to increase power density, while its source flip technology decreases thermal resistance by 63C/W to 56C/W. Also, the device's FOM represents a 35% improvement over previous-generation devices, which reduces conduction and switching losses to save energy in power conversion applications.

PowerPAK 1212-F source flip technology reverses the usual proportions of the ground and source pads, expanding the ground pad area to deliver a more efficient thermal dissipation path and, therefore, promoting cooler operation. At the same time, it minimises the switching area's extent, which helps reduce the impact of trace noise. In this package specifically, the source pad dimension increases by a factor of 10, from 0.36mm² to 4.13mm², allowing a commensurate improvement in thermal performance. The PowerPAK 1212-F's centre gate design also simplifies parallelisations of multiple devices on a single-layer PCB.

The device's source flip PowerPAK 1212-F package is particularly suited for applications such as secondary rectification, active clamp BMS, buck and BLDC converters, OR-ing FETs, motor drives, and load switches. Typical end products comprise welding equipment and power tools; servers, edge devices, supercomputers, and tablets; lawnmowers and cleaning robots; and radio base stations.

The device is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free.