New N-channel MOSFET supports miniaturisation within power supply applications

Toshiba Electronics Europe GmbH has released a new 100V N-channel power MOSFET based upon its latest generation U-MOSX-H process. The new device is ideal for challenging applications, including switching power supplies for data centres and communication base stations and industrial uses.

Designed for efficient operation, the new TPH3R10AQM achieves a value of only 3.1mOhm (max.) for the all-important drain-source on-resistance (RDS(ON)). This represents a 16% improvement over its current 100V product (TPH3R70APL) that employs the established generation process.

The highly capable device provides a drain-source voltage (VDSS) of 100V and a drain current (ID) capability of up to 120A. The low gate switch charge (QSW) improves efficiency in high-frequency applications, while the elevated maximum channel temperature (Tch) of 175C decreases the necessity for thermal management, thereby reducing the size and cost of end equipment.

The new MOSFET has expanded its SOA by 76% compared to the earlier generation, making it ideal for linear mode operation. This enhancement greatly improves suitability for and performance in hot swap circuitry. Furthermore, as the gate threshold voltage range is 2.5V to 3.5V, the device is less susceptible to spurious triggering.

The product uses the highly footprint-compatible SOP Advance(N) package, which gives it a PCB footprint of only 4.9mm x 6.1mm.