Symmetric dual MOSFET delivers best in class RDS(ON)

Vishay Intertechnology, Inc. has released a new 80V symmetric dual n-channel power MOSFET that combines high and low-side TrenchFET Gen IV MOSFETs in a single 3.3mm x 3.3mm PowerPAIR 3x3 FS package. For power conversion in industrial and telecom applications, the Vishay Siliconix SiZF4800LDT raises power density and efficiency while improving thermal performance, lowering component counts, and simplifying designs.

The dual MOSFET can be used instead of two discrete devices typically specified in the PowerPAK 1212 package, saving 50% board space. The device supplies designers with a space-saving solution for synchronous buck converters, POL converters, and half- and full-bridge power stages for DC-DC converters in radio base stations, industrial motor drives, welding equipment, and power tools. In these applications, the high and low side MOSFETs of the device form an optimised combination for 50% duty cycles, while its logic level turn-on at 4.5V simplifies circuit driving.

To increase power density, the MOSFET offers best-in-class on-resistance down to 18.5mOhm typical at 4.5V. This is 16% lower than the closest competing device in the same package dimensions. The device provides a low on-resistance times total gate charge for increased efficiency in high–frequency switching applications, a key figure of merit for MOSFETs used in power conversion applications of 131mOhm*nC.

The device's flip-chip technology improves thermal dissipation, resulting in 54% lower thermal resistance than competing MOSFETs. The device's combination of low on-resistance and thermal resistance results in a continuous drain current of 36A, which is 38% higher than the closest competing device. The MOSFET offers a unique pin configuration that allows a simplified PCB layout and supports shortened switching loops to minimise parasitic inductance. The device is 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free.