MinDCet at PCIM Europe: Showcasing Power IC Innovations

At the recent PCIM Europe event, Mike Wens from MinDCet introduced the company's newest power IC solutions. MinDCet, a leading IC Design House specialising in power, displayed some of their most innovative and high-performing products.

Gallium Nitride Power Stage and Gate Driver

One of the first demonstrations was the Gallium Nitride (GaN) Power Stage and Gate Driver. What sets MinDCet's gate driver apart is its comprehensive functionality designed to enhance the robustness and reliability of power stages. Key features include a charge pump combined with boot strap diodes, enabling a 100% duty cycle, floating linear regulators to prevent gate overcharging, and extensive integration to provide a compact and reliable solution. The high gate drive strength ensures maximum performance from your power stage.

Efficiency Unveiled

One impressive demonstration was a 48-volt input, 3.3-volt output converter, which achieved an efficiency of approximately 96% - a level of performance not attainable with any standard MOSFET.

Silicon Carbide Inverter

MinDCet also presented a high-power Silicon Carbide Inverter capable of handling up to 250 kilowatts. The gate drivers for this inverter, which are still in the engineering phase, are set to be available in the market by Q1 2024. The silicon carbide gate driver boasts a high output power of up to 12 amps and incorporates a two-level turn-on scheme.

MDC901 GaN Gate Driver

MinDCet's MDC901 GaN Gate Driver stood out for its versatility. The gate driver was showcased as part of a Class D audio set, demonstrating how high performance can be harnessed for an audio application. The MDC901 GaN Gate Driver, used in a full bridge configuration, helped create a resonant class D amplifier.

For more information on MinDCet and their range of power IC solutions, visit their official website at www.mindcet.com. You can also reach out to them directly via their contact email.