Power Schottky diodes enable improved circuit efficiency

29-01-2015 | Digikey | Power

GeneSiC Semiconductor's silicon carbide power Schottky diodes are now stocked by Digi-Key. The devices promote improved circuit efficiency for lower overall cost systems, lower switching losses and ease paralleling devices without thermal runaway. They allow for smaller heat sink requirements, low reverse recovery current, low device capacitance and low reverse leakage current.
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GeneSiC Semiconductor GB01SLT12-252

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