New serial quad I/O SuperFlash devices with 1.8V low-power 4-Mbit and 8-Mbit memory

With the introduction of the SST26WF080B and SST26WF040B, Microchip has expanded its 1.8V serial quad I/O (SQI) SuperFlash memory family. The devices offer 4-Mbit and 8-Mbit of memory and are manufactured with Microchip’s high-performance SuperFlash technology, which provides the industry’s fastest erase times and superior reliability, says the company. The SST26WF080B/040B provide the fastest erase times of any competing device due to the use of SuperFlash technology. Sector and block erase commands are completed in just 18ms and a full chip erase operation is completed in 35ms. Competing devices require in the range of 5 to 15 seconds to complete a full chip erase operation, making SST26WF080B/040B approximately 300 times faster. The fast erase times can provide a significant cost savings to users by minimising the time required for testing and firmware updates, therefore increasing their manufacturing throughput. The SQI interface is a high-speed 104 MHz quad I/O serial interface which allows for high data throughput in a low pin-count package. This interface enables a low latency execute-in-place (XIP) capability, allowing programmes to be stored and executed directly from the Flash memory and eliminating the need for code shadowing on a RAM device. The SST26WF080B/040B provides faster data throughput than a comparable x16 parallel Flash device without the associated high cost and high-pin count of parallel Flash. The SQI interface also offers full command-set backwards compatibility to the traditional Serial Peripheral Interface (SPI) protocol. Designed for low-power consumption, the SST26WF080B/040B helps to maximise battery life in portable powered applications. Standby current consumption is 10 µA typical and a deep power-down mode further reduces current consumption to 1.8 µA typical. Active read current at 104 MHz is 15 mA typical. The combination of 1.8V operation with low-power consumption and small form factor packaging makes the SST26WF080B/040B an excellent choice for applications such as mobile handsets, Bluetooth headsets, GPS, camera modules, hearing aids and any battery-powered devices. The SST26WF080B/040B offers excellent quality and reliability with 100 years data retention and device endurance of over 100,000 erase/write cycles. Enhanced safety features include software write protection of individual blocks for flexible data/code protection and a One-Time Programmable (OTP) 2 Kbyte Secure ID area. These features protect against unauthorised access and malicious read, programme and erase intentions. The device also includes a JEDEC-compliant Serial Flash Discoverable Parameter (SFDP) table, which contains identifying information about the function and capability of the SST26WF080B/040B in order to simplify software design. The SST26WF080B/040B devices are available for sampling and volume production in 8-contact WSON (6mm x 5mm), 8-lead SOIC (150 mil), 8-contact USON (2mm x 3mm) and 8-ball XFBGA (Z-Scale) packages, says the company.