New 4Mb family of asynchronous SRAMs with on-chip error-correcting code

Cypress Semiconductor has announced it is sampling new 4Mb asynchronous SRAMs with error-correcting code (ECC), a feature which enables them to provide the highest levels of data reliability, without the need for additional error correction chips - simplifying designs and reducing board space. The devices ensure data reliability in a wide variety of industrial, defence, communication, data processing, medical, consumer and automotive applications. Soft errors caused by background radiation can corrupt memory content, resulting in a loss of critical data. A hardware ECC block in Cypress's new asynchronous SRAM family performs all error correction functions inline, without user intervention, delivering best-in-class Soft Error Rate (SER) performance of less than 0.1 FIT/Mb (one FIT is equivalent to one error per billion hours of device operation). The new devices are pin-compatible with current asynchronous fast and low-power SRAMs, enabling customers to boost system reliability while retaining board layout. The 4Mb SRAMs also include an optional error indication signal that indicates the correction of single-bit errors, says the company. "We have received an overwhelming response from customers on our 16Mb asynchronous SRAMs with ECC, the first devices of our SRAM with on-chip ECC family that we introduced last year," said Sunil Thamaran, senior director, Asynchronous SRAM Business Unit, Cypress. "Adding a new density to this family broadens the applications that can benefit from our on-chip ECC technology. Cypress is committed to developing new SRAM technologies to better serve our customers, adding to our undisputed leadership in this market." The Cypress 4Mb asynchronous SRAMs are available in three options - Fast, MoBL and Fast with PowerSnooze - an additional power-saving Deep Sleep mode that achieves 15uA (max) deep-sleep current for the 4Mb SRAM. Each of the options is offered in industry standard x8 and x16 configurations. The devices operate at multiple voltages (1.8V, 3V, and 5V) over -40C to +85C (Industrial) and -40C to +125C (Automotive-E) temperature ranges. The new SRAMs are currently sampling in industrial temperature grade, with production expected in July 2015. These devices will be available in RoHS-compliant 32-pin SOIC, 32-pin TSOP II, 36-pin SOJ, 44-pin SOJ, 44-pin TSOP II and 48-ball VFBGA packages, says the company.