GaN HEMT-based monolithic microwave integrated circuits target high-frequency systems

Mouser has announced it now stocks Cree's new gallium nitride high electron mobility transistor (HEMT) monolithic microwave integrated circuits (MMICs). The MMICs target X-band and C-band high-frequency applications. Gallium nitride (GaN) is a wide bandgap material used for high-power high-performance semiconductors with electrical characteristics superior to conventional silicon devices, useful in many applications including power conversion systems. High-speed GaN devices demonstrate noticeable performance advantages in sensitive radar equipment, satellite radios, and broadband amplifiers. The MMIC transistors provide extremely wide signal bandwidths in a very small footprint. Minimum power output is 25W for the CMPA5585025F MMIC for 5.5 to 8.5GHz C-band communications. The CMPA801B025F MMIC provides 25W for the 8 to 11GHz X-band frequencies used for radar and communications systems. The high end CMPA601C025F MMIC supports the X-band operating frequencies from 6GHz up to 12GHz at 35W. The devices are available in screw terminal mountings. Cree GaN MMIC transistors target high-precision, high-reliability, high frequency applications such as marine and land-based radar systems, broadband radio amplifiers, point-to-point radio systems, satellite communications including uplinks, and test equipment amplifiers.