Ultra-low on-state resistance 60V N-channel MOSFETs improve efficiency

New high-efficiency On Semiconductor single N-channel devices aimed at data networking, telecommunications and industrial applications are now available from Digi-Key. The devices are capable of delivering ultra-low on-state resistance, RDS(ON) values, thereby minimizing conduction loss and improving overall operational efficiency levels. They also have very low gate capacitance (Ciss), down to 2, 164pF, which ensures driver losses are kept as low as possible. With a rated breakdown voltage of 40V, On Semiconductor's NTMFS5C404NLT, NTMFS5C410NLT, and NTMFS5C442NLT MOSFETs have maximum RDS(ON) values at VGS=10V of 0.74mohm, 0.9mohm, and 2.8mohm respectively, with continuous drain currents of 352A, 315A, and 127A respectively. These are complemented by the NTMFS5C604NL, NTMFS5C612NL, and NTMFS5C646NL all of which have breakdown voltage ratings of 60V. The maximum RDS(ON) of these devices is 1.2mohm, 1.5mohm, and 4.7mohm respectively, while their associated continuous drain currents are 287A, 235A, and 93A. Both the 40V and 60V devices are rated to operate at junction temperatures up to 175C, thereby giving engineers greater thermal headroom for their designs.