New 20V chipscale MOSFET in 0.8mm x 0.8mm package saves space and power for mobiles

Vishay has introduced a new TrenchFET 20V n-channel MOSFET in the chipscale MICRO FOOT 0.8mm x 0.8mm package with an ultra-low profile of just 0.357mm. Designed to save space, decrease power consumption, and extend battery usage in smartphones, tablets, wearable devices, solid-state drives, and portable medical devices such as hearing aids, the Vishay Siliconix Si8824EDB provides the industry's lowest on-resistance for any 20V device with a 1mm square or < 0.7mm square outline. Optimized for use as a load switch, small-signal switch, and high-speed switch in power management applications, the Si8824EDB features extremely low on-resistance of 75mohm at 4.5V, 82mohm at 2.5V, 90mohm at 1.8V, 125mohm at 1.5V, and 175mohm at 1.2V. These ratings are up to 25% lower than the closest competing 20V MOSFET in an identical CSP package, and up to 65% lower than the closest competing 20 V device in the DFN 1mm by 0.6mm package. The MOSFET's 20 V VDS, ESD protection, ratings down to 1.2V, and low on-resistance provide a combination of safety margin, gate drive design flexibility, and high performance for lithium-ion battery-powered applications. The Si8824EDB offers an extremely low on-resistance times area of 40mohm-mm² - 28% lower than the closest competing 20 V MOSFET in the DFN 1 mm square package - to save space and reduce battery power consumption in mobile applications. The device's low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat. The MOSFET's 2000V integrated ESD protection prevents static damage from handling or human body contact. Samples and production quantities of the Si8824EDB are available now, says the company.