High-speed monolithic low-voltage CMOS DDR3L SDRAM

Alliance's new monolithic high-speed, low-voltage CMOS double data rate three synchronous DRAM (DDR3L SDRAM), with an 8-Gb density in the 96-ball, 9mm x 14mm lead (Pb)-free FBGA package, is now available from MSC. Featuring state-of-the art silicon provided by Micron Technology, Inc., the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800MHz. With minimal die shrinks, the single-die 8Gb DDR3L SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications - eliminating the need for costly redesigns and part requalification. This 8Gb DDR3 is a logical choice for those requiring increased memory yet face board space constraints. The AS4C512M16D3L operates from a single +1.35V power supply and is available with a commercial temperature range of 0C to +95C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40C to +95C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16 bits.