DFN2020-packaged P-channel MOSFETs reduce load switching losses

Supplied in small form-factor 2mm x 2mm DFN2020 packages, DMP1022UFDF and DMP2021UFDF P-channel MOSFETs from Diodes Incorporated are rated at 12V and 20V, respectively. The devices are specifically designed for load switching in high-efficiency battery management of portable consumer electronics such as Tablets, Smartphones, Ultrabooks, and for applications in the Internet of Things. Circuit designers looking for a simple and inexpensive method of disabling low-voltage power rails will appreciate the guaranteed low on-state resistance (RDS(ON)) of these MOSFETs under low gate drive conditions. This enables power rails down to 1.5V to be switched with minimal conduction losses. The DMP1022UFDF has an RDS(ON) of <20mohm with a -2.5V gate drive, while the DMP2021UFDF achieves <26mohm at -1.8V gate drive. Switching off power to idle processor cores and other inactive circuitry using MOSFETs as high-side load switches is a particularly effective way of extending battery life. Equally important for space-critical applications is the small 4mm2 footprint DFN2020 package, which has an off-board height of just 0.6mm. The package also features an exposed drain pad with a thermal resistance of <10C/W from junction to pad to assist in extracting heat from the package, reducing die temperature and increasing device reliability, says the company.