First space-grade GaN FET gate driver helps satellites become smaller and more efficient

Texas Instruments has announced a new family of radiation-hardened and radiation-tolerant half-bridge GaN FET gate drivers. This family of gate drivers incorporates the industry's first space-grade GaN FET driver that supports up to 200V operation. The devices are provided in pin-to-pin compatible ceramic and plastic packaging options and support three voltage levels. The company's advancements in space-grade power products allow engineers to design satellite power systems for all space missions using just one chip supplier.

Satellite systems are growing increasingly complex to satisfy the demand for more on-orbit processing and data transmission, higher-resolution imaging, and more precise sensing. To improve mission capabilities, engineers strive to maximise electrical power system efficiency. The new gate drivers are designed to accurately drive GaN FETs with fast rise and fall times, improving power-supply size and density. This enables a satellite to more effectively use the power generated by its solar cells to perform mission functions.

"Satellites perform critical missions, from providing global internet coverage to monitoring climate and shipping activity, enabling humans to better understand and navigate the world," said Javier Valle, product line manager, Space Power Products at TI. "Our new portfolio enables satellites in low, medium and geosynchronous earth orbits to operate in the harsh environment of space for an extended period of time, all while maintaining high levels of power efficiency."

John Dorosa, a TI systems engineer, will present 'How to easily convert a hard-switched full bridge to a zero-voltage-switched full bridge' on Tuesday, 18 March 2025, at 9:20am Eastern time at the Applied Power Electronics Conference in Atlanta, Georgia. This industry session will feature the company's TPS7H6003-SP gate driver.