High-reliability AEC-Q101-certified SiC Schottky diodes
21-03-2016 |
Farnell element14
|
Semiconductors
Rohm's high-reliability SiC Schottky diodes are now available from Farnell
element14. The Automotive-grade AEC-Q101-certified SiC Schottky barrier
diodes are suitable for EV development and secondary side rectification for
on-board chargers.
Features include 1200V/5A to 20A, 650V/ 6A to 40A ranges, world's lowest VF,
ultra-low switching loss and stable temperature characteristics.
The SiC Schottky barrier diodes offer reduced switching loss and high-speed
switching operation as a result of a small total capacitive charge (Qc).
For better performance, SiC devices maintain constant characteristics in
temperature change environments, a marked difference from Si-based fast
recovery diodes where the trr increases along with the temperature.