High-reliability AEC-Q101-certified SiC Schottky diodes

21-03-2016 | Farnell element14 | Semiconductors

Rohm's high-reliability SiC Schottky diodes are now available from Farnell element14. The Automotive-grade AEC-Q101-certified SiC Schottky barrier diodes are suitable for EV development and secondary side rectification for on-board chargers. Features include 1200V/5A to 20A, 650V/ 6A to 40A ranges, world's lowest VF, ultra-low switching loss and stable temperature characteristics. The SiC Schottky barrier diodes offer reduced switching loss and high-speed switching operation as a result of a small total capacitive charge (Qc). For better performance, SiC devices maintain constant characteristics in temperature change environments, a marked difference from Si-based fast recovery diodes where the trr increases along with the temperature.
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