Latest 1200V/180A full-SiC module offers most efficient high-frequency operation

Rohm's new SiC (silicon carbide) BSM180D12P3C007 power module is rated at 1200V/180A and is based on in-house supply chain capacities and advanced packaging capabilities. The half-bridge SiC module integrates mass-produced trench-type SiC MOSFETs and SiC SBDs in the same footprint as previous modules. Rohm has pioneered commercial power modules equipped with SiC-MOSFETs and SiC-SBDs and was able to successfully mass-produce the industry's first trench-type SiC MOSFETs by utilizing a proprietary structure, ensuring long-term reliability. The new module implements MOSFETs with their advanced UMOS structure going without JFET region and maximizing SiC characteristics. It provides the lowest drain source resistance together with high speed switching performance, and - due to the extremely low Vf and the fast recovery performance of the built-in SiC-SBDs - it has almost no recovery loss Err. As a result, the module achieves 77% lower switching loss than conventional IGBT modules and 42% lower Switching loss than planar SiC Modules utilizing a 2nd Gen SiC-DMOS structure. This not only enables high-frequency operation but also contributes to smaller cooling systems as well as smaller peripheral components which in consequence paves the way to greater energy savings and end-product miniaturization, says the company.