Automotive grade Schottky barrier diodes suitable for EV development

07-06-2016 | Farnell element14 | Power

Available from Farnell element14, these automotive grade AEC-Q101 certified SiC Schottky barrier diodes are suitable for EV development and secondary side rectification for on-board chargers. These SiC devices from ROHM semiconductor offer reduced switching loss and high-speed switching operation as a result of a small total capacitive charge. For better performance, SiC devices maintain constant characteristics in temperature change environments, a marked difference from Si-based fast recovery diodes where the trr increases along with the temperature.
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By Electropages Admin