MOSFETs now available in a dual asymmetric power package

Vishay says it has introduced the industry’s first AEC-Q101 qualified 12V and 20V MOSFETs in a dual asymmetric power package and in now in stock at Digi-Key. The Siliconix SQJ202EP and SQJ200EP N-channel TrenchFET devices each combine a high and low-side MOSFET in the compact 5mm x 6mm PowerPAK SO-8L dual asymmetric package with low-side maximum on-resistance down to 3.3mohm. By co-packaging two MOSFETs in an asymmetric package, with a larger low-side MOSFET for lower on-resistance and smaller high-side MOSFET for faster switching, the 12V SQJ202EP and 20V SQJ200EP provide high-performance alternatives to standard dual devices, which restrict the optimum combination of MOSFETs for high-current, high-frequency synchronous buck designs. Compared to using discrete components, the devices occupy less board space and can facilitate more compact PCB layouts. The devices offer high-temperature operation to +175C to provide the ruggedness and reliability required for automotive applications such as infotainment, telematics, navigation, and LED lighting. The SQJ202EP is well suited for applications with bus voltages less than or equal to 8V and offers extremely low maximum on-resistance down to 3.3mohm for the channel two low-side MOSFET. For applications with higher bus voltages, the 20V SQJ200EP features a slightly higher maximum on-resistance of 3.7mohm. Both parts are 100% tested for gate resistance and avalanche and they are RoHS-compliant and halogen-free.