Design delivers high withstand voltage with low ON resistance and fast switching speeds

17-08-2016 | Digikey | Power

Available from Digi-Key, ROHM’s third generation SiC MOSFETs utilise a proprietary trench gate structure that reduces ON-resistance by 50% and input capacitance by 35% compared with existing planar-type SiC MOSFETs. This translates to significantly lower switching loss and faster switching speeds, improving efficiency while reducing power loss in a variety of equipment.
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