New 6W DC-DC converter optimized for IGBT, SiC and MOSFET gate driving

Murata Power Solutions has announced an extension to its MGJ6 series of isolated 6W dual-output DC-DC converters. Optimized to suit the bipolar voltages required for high-side and low-side IGBT, SiC and MOSFET gate drive applications, the MGJ6 series is available now in SIP, DIP and a low-profile surface-mount package format. The series comprises combinations of wide input voltages with nominals of 5, 12, or 24VDC and + 15 / - 5, + 15 / - 10 or + 20 / - 5VDC outputs. Suitable for low to medium power applications that require a DC link voltage up to 3kVDC, the asymmetric outputs provide optimum drive levels to maintain a high system efficiency with low EMI levels. Also, with its very low coupling capacitance (typically 15pF) EMI coupling through the converter is reduced. The MGJ6 series has a characterized dV/dt immunity of 80kV/us minimum at 1.6 kV, this contributing to a high degree of reliability in fast switching drive systems. The series also has characterized partial discharge performance, this being crucial to achieving a long service life in high performance applications. Certification to safety standard UL60950 for reinforced insulation and the medical 3rd edition safety standard ANSI/AAMI ES60601-1 for 2 MOOPs and 2 MOPPs is currently pending. With a creepage and clearance of 8mm, the MGJ6 will satisfy safety agency requirements for extra high working voltages. Commenting, Murata’s product marketing manager, Ann-Marie Bayliss, said: “The MGJ6 series provides optimized voltages for power gate drives for the best overall system performance and efficiency. With characterized partial discharge performance, they are now available, in a choice of form factors.” Short circuit and overload protection features are standard across the range and a frequency synchronization / enable input pin can simplify EMC filter design, says the company.