Limiter diodes feature fast turn-on times and low insertion loss

SemiGen has added a series of new limiter diodes to its expanding product offerings, SLP7100 series. The diodes are processed with a high-resistivity epitaxial wafer (epi) that has thin intrinsic layers. These devices are two to 20 microns thick and can be gold doped to achieve specific performance goals. The limiter diodes are used in passive or active limiter designs in the 100MHz to 30GHz frequency ranges and feature a low capacitance and resistance as well as a turn-on time as low as 5ns. These easily bondable limiters come with a maximum input power ranging from +47dBm to +66dBm and a leakage output power from +19dBm to +44dBm. Typical insertion losses range from a low 0.10dB to a maximum of 0.2dB. These limiters are ideally suited for high-power applications, radar, EW, and communications systems as protection against unwanted power surges or spikes for low noise components. The series can be supplied in chip form or in 20 different package varieties offered through SemiGen.