New schottky diodes ideal for low, medium and high barrier applications

SemiGen has added a series of new Schottky diodes to its expanding product offerings. These silicon-based Schottky diodes utilize various metal schemes to provide excellent performance for low, medium and high barrier applications through 40 GHz. This series feature small junction capacitances, low I/F noise, low resistance, and multi-junction chips for optimum performance. With forward voltage drops as high at 0.6V and superior TSS, these diodes are ideal for detector/mixer applications with frequency ranges from the S-band up to the Ka-band as well as modulators, low power limiters and high speed switches. With 48 different models to choose from, these barrier diodes come in chip, glass, ceramic, and beam lead packages. The company’s barrier bridge quads and ring quads offer breakdown voltages as high as 5V, capacitances ranging from 0.15pF to 0.35pF, and a series resistance ranging from 14ohm to 20ohm. These bridge quads and ring quads have a stable matched electrical performance and are of a monolithic construction with operating temperatures ranging from -55C to 150C, these devices are ideal for use in designs of doublers, modulators, and double balanced mixers up to 40GHz.