GaN transistors ideal for radar and radio communications

Mouser is now stocking QPD GaN RF transistors from Qorvo. Built on the company’s high-performance GaN on SiC technology, these high-electron-mobility transistors (HEMTs) with a single-stage matched power amplifier transistor offer a wide array of frequency ranges, output power, and operating voltages for high-efficiency applications. GaN technology supports RF power densities between five and six times higher than gallium arsenide-based RF amplifiers. The proven performance and reliability of GaN technology makes it an ideal choice for infrastructure, defence and aerospace applications such as radar, electronic warfare, communications, navigation, and similar applications. This increase in performance capability offers designers the flexibility to reduce board space and system costs while improving system performance. The transistors include the recently released QPD1003, claimed to be the industry's first 500W, L-Band power amplifier internally matched to 50ohms. The new device meets the performance needs of high-power phased arrays such as AESA radars, which operate in the 1.2GHz to 1.4GHz frequency range. These systems require power amplifiers that operate at maximum efficiency resulting in low heat generation in demanding environmental conditions.