New power MOSFET lowers conduction and switching losses with increased efficiency

Vishay Intertechnology has introduced the first device in its fourth generation of 600V E Series power MOSFETs. Providing high efficiency for telecom, industrial, and enterprise power supply applications, the Vishay Siliconix n-channel SiHP065N60E slashes on-resistance by 30% compared with previous 600V E Series MOSFETs while delivering 44% lower gate charge. This results in the industry's lowest gate charge times on-resistance, a key figure of merit (FOM) for 600V MOSFETs used in power conversion applications. "We are committed to providing our customers with a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required by the latest electronic systems," said David Grey, senior director of market development for Vishay. "With the SiHP065N60E and the upcoming fourth-generation 600V E Series family, we are addressing the need for efficiency and power density improvements in the first stages of the power system architecture — power factor correction and subsequent high-voltage DC-DC converter blocks." Built on the company’s latest energy-efficient E Series superjunction technology, the device features low maximum on-resistance of 0.065ohm at 10V and ultra-low gate charge down to 49nC. The device's FOM of 2.8ohm*nC is 25% lower than the closest competing MOSFET in the same class. For improved switching performance, the device provides low effective output capacitances Co(er) and Co(tr) of 93pf and 593pF, respectively. These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies for telecom, industrial, and enterprise power systems. Offered in the TO-220AB package, the device released today is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100% UIS testing.