Passive GaN mixers hit a new benchmark of linearity

Custom MMIC has a new technical brief illuminating their progress with reaching incredible limits of linearity with passive MMIC mixers using GaN Technology. Over the past year, mixer experts at the company have been exploring the use of GaN processes as the basis for extremely linear RF mixers. Deducing that the high linearity performance of GaN power amplifiers may cross-over to other critical microwave components, Their engineers have gone through several iterations of GaN mixer technologies and typologies with several of their key foundry partners. Ultimately, the fruits of their efforts have led to passive GaN mixer designs that surpass all GaAs passive mixer designs in terms of the ratio of input third-order intercept point (IIP3) to local oscillator (LO) drive -- a figure-of-merit the company is coining as Linear Efficiency. From S-band to K-band (2GHz to 19GHz) these new passive GaN mixers are demonstrating IIP3 figures well above 30dBm, LO drive levels around 20dBm, and linear efficiencies above 10dB.