Expanded GaN power portfolio features smallest and fastest GaN drivers

Expanding on its industry-leading GaN power portfolio, Texas Instruments has two new high-speed GaN FET drivers to create more efficient, higher-performing designs in speed-critical applications such as LIDAR and 5G RF envelope tracking. The LMG1020 and LMG1210 can achieve switching frequencies of 50MHz while enhancing efficiency and offering five times smaller solution sizes than previously possible with silicon MOSFETs. With an industry-best drive speed as well as a minimum pulse width of 1ns, the LMG1020 60MHz low-side GaN driver enables high-accuracy lasers in industrial LIDAR applications. The small wafer-level chip-scale (WCSP) package of only 0.8mm x 1.2mm helps minimise gate-loop parasitics and losses, further boosting efficiency. The LMG1210 is a 50MHz half-bridge driver designed for GaN FETs up to 200V. The device's adjustable dead time control feature is designed to improve efficiency as much as 5% in high-speed DC-DC converters, motor drives, Class-D audio amplifiers as well as other power-conversion applications. Designers can achieve high system-noise immunity with the industry's highest CMTI of more than 300V/ns.