Superjunction device lowers conduction and switching losses

Vishay Intertechnology's latest device is its fourth generation of 600V E Series power MOSFETs. Offering high efficiency for industrial, telecom, and enterprise power supply applications, the Vishay Siliconix n-channel SiHH068N60E reduces on-resistance by 27% contrasted with previous-generation 600V E Series MOSFETs while delivering 60% lower gate charge. This produces what is claimed to be the industry's lowest gate charge times on-resistance for devices in the same class, a key figure of merit (FOM) for 600V MOSFETs used in power conversion applications. Built on the company's latest energy-efficient E Series superjunction technology, the device features low typical on-resistance of 0.059Ohm at 10V and ultra-low gate charge down to 53nC. The device's FOM of 3.1Ohm*nC is 12% lower than the closest competing MOSFET in the same class. For enhanced switching performance, the device offers low effective output capacitances Co(er) and Co(tr) of 94pf and 591pF, respectively. These values translate into reduced conduction and switching losses to save energy. Attachments area