SPI nvSRAM for the automotive temperature range

Anvo-Systems Dresden GmbH has expanded its product portfolio with the 64Kb ANV32E61ASA66 nvSRAM with SPI. In the event of an unforeseeable operating voltage drop, the memory device facilitates storage of all data and improves the security of a modern industrial system. The non-volatile data retention of ten years ensures high system reliability.

The non-volatile SRAM is specified for the automotive temperature range of -40C to +125C. The memory device is ideal for innovative applications requiring extended temperatures, like industrial automation, robotics, industrial IoT based systems, building automation, smart metering, and black boxes.

For the space-saving integration, the device is offered in a compact, RoHS compliant 8-pin 150mil SOIC package.

The nvSRAM provides a storage capacity of 64Kb and is internally organised as 8k words of 8-bits. Each SRAM memory cell includes a SONOS flash storage element. In the event of immediate operating voltage drop, the technology allows non-volatile storage of all data in the PowerStore operation. On power-up, the data is automatically restored in the SRAM. The device features a clock rate of 66MHz and unlimited read and write endurance comparable to standard SRAMs. Special security functions, such as Block Write Protection, Secure READ and Secure WRITE, assure a high degree of reliability.

The integrated power-down functionality (Hibernate Mode) ensures low system power consumption in standby mode. The serial SPI nvSRAM can be operated with 3V to 3.6V.