Fast body diode MOSFET for power conversion applications

Vishay Intertechnology has introduced a new device in its fourth generation of 600V EF Series fast body diode MOSFETs. Offering high efficiency for telecom, computing, industrial, and enterprise power supply applications, the Vishay Siliconix n-channel SiHH070N60EF cuts on-resistance by 29% compared with prior-generation devices while providing 60% lower gate charge. This produces what is claimed to be the industry's lowest on-resistance times gate charge for devices in the same class, a key FOM for 600V MOSFETs employed in power conversion applications.

The company provides a wide range of MOSFET technologies that aid all stages of the power conversion process, from high voltage inputs to the low voltage outputs needed to power the latest high-tech equipment. With the new device and impending devices in the fourth-generation family, the company is meeting the demand for efficiency and power density improvements in two of the first stages of the power system architecture — totem-pole bridgeless PFC and soft-switched DC-DC converter topologies.

Built on the company's latest energy-efficient E Series superjunction technology, the device offers low typical on-resistance of 0.061Ohm at 10V and ultra-low gate charge down to 50nC. The device's FOM of 3.1Ohm*nC is 30% lower than the closest competing MOSFET in the same class. These values translate into decreased conduction and switching losses to save energy. For improved switching performance in ZVS topologies such as LLC resonant converters, the device offers low effective output capacitances Co(er) and Co(tr) of 90pf and 560pF, respectively. The device's Co(tr) is 32% lower than the nearest competing MOSFET in the same class.

Provided in the PowerPAK 8x8 package, the device is RoHS-compliant, halogen-free, and created to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.